Advance program (at the date of October 1) is here.
APWS2019 focuses on the science and technology of widegap semiconductors, including III-nitrides, silicon carbide, oxides, diamond and so forth.
Research has led to developments in optical and electronic devices, including those for environmental and energy applications.
The following topics will be discussed:
Bulk growth, epitaxial growth, doping and point defects, growth methods,
and related technology
Optical and electrical properties, structural analysis, and theory and simulation
- Optical devices
Visible, UV, and white LEDs, micro LEDs, laser diodes, solar cells, detectors,
and related optical devices
- Electronic devices
Transistors, diodes, high-power and high-frequency devices,
device processing, contacts, and reliability
Program at a glance (at the date of August 28)
Allotted time for each presentation
Plenary talk: 50 minutes
Invited talk: 30 minutes (including 5-min. Q&A)
Contributed oral talk: 15 minutes (including 3-min. Q&A)
Poster presentation: 110 minutes
-Nov. 11(Mon) 11:50-13:40
-Nov. 12(Tue) 12:40-14:30
-Nov. 14(Thu) 12:30-14:20
Guideline for plenary/invited/contributed oral presenters
A projection laser pointer and a laptop computer with MS PowerPoint 2016
and a latest version of Adobe Acrobat Reader will be available for oral presentations.
We kindly ask the speakers to upload the presentation files to the computer during the break time before the session.
It is recommended for oral presenters to make slides with the XGA standard (1024×768; 4:3 ratio).
The speakers may use their own laptops, compatible with a VGA video connector.
In that case, we kindly ask to test the computers during the break time before the session.
Guideline for poster presenters
Boards and push pins will be provided for poster presenters.
The boards will fit posters up to A0 format (W841 mm × H1189 mm).
Please display the paper title, author names, and affiliations at the top of the posters.
The presenters should stand in front of their own posters to discuss their results with attendees during the allotted session time.
Posters may be set up from the morning of the day of the poster session and the setting must be completed before the allotted session time (i.e., lunch time).
They should be immediately taken down after the session ends.
The posters that are left until the start of next session will be discarded by the program committee.
Hiroshi Amano (Nagoya University, Japan)
Wide-bandgap semiconductors as key materials in realizing zero emission of greenhouse gases
Hideo Hosono (Tokyo Institute of Technology, Japan)
Materials designing novel wide gap semiconductors
Tsutomu Miyasaka (Toin University of Yokohama, Japan)
Progress of halide perovskite semiconductors in high performance photovoltaics
Bo Shen (Peking University, China)
Recent progress on the large lattice-mismatched hetero-epitaxy and physical
investigation of III-nitride thin films and quantum structures
Euijoon Yoon (Seoul National University, Korea)
Self-passivated high-efficiency micro-LEDs using sapphire nano-membrane technology
Michał Boćkowski (UNIPRESS/Nagoya University, Poland)
Bulk growth of GaN. How to overcome the equilibrium crystal shape?
Kevin Chen (Hong Kong University of Science and Technology, China)
Integration on GaN-on-Si p-GaN gate HEMT platform
Yong Hoon Cho (Korea Advanced Institute of Science and Technology, Korea)
Group III-nitride semiconductor nanostructures for room-temperature quantum
Hajime Fujikura (SCIOCS, Japan)
HVPE for GaN and AlN epi-layer growth
Bernard Gil (CNRS University Montpellier, France)
Boron nitride from its physics to advanced photonic applications
Shinsuke Harada (National Institute of Advanced Industrial Science and
Outstanding potential of SiC superjunction MOSFET as a next generation 1.2 kV-class power transistor
Motoaki Iwaya (Meijo University, Japan)
Toward the realization of AlGaN-based UVB laser diodes
Nam Kyun Kim (Korea Electrotechnology Research Institute, Korea)
Development of SiC power devices with low on-resistance
Yoshinao Kumagai (Tokyo University of Agriculture and Technology, Japan)
Homoepitaxial growth of β-Ga2
by halide vapor phase epitaxy for the preparation of epitaxial wafers
for vertical power device application
Kei May Lau (Hong Kong University of Science and Technology, China)
GaN-based integrated micro LED research
Jin Min Li (Institute of Semiconductors, Chinese Academy of Science, China)
Emerging new techniques for efficient AlGaN DUV LEDs: from 2D to 3D
Yun-Li Li (PlayNitride, Taiwan)
Development of transparent microLED display
Tsubasa Matsumoto (Kanazawa University, Japan)
Recent progress for inversion channel mobility improvement in diamond MOSFETs
Yutaka Mikawa (Mitsubishi Chemical, Japan)
Acidic ammonothermal growth of bulk GaN
Hideto Miyake (Mie University, Japan)
Threading dislocation reduction of sputter-deposited AlN/sapphire by high-temperature
Okhyun Nam (Korea Polytechnic University, Korea)
Growth and characterization of widegap III-nitride based optoelectronic
and electronic devices using HT-MOCVD
Susumu Noda (Kyoto University, Japan)
Recent progress in high-brightness photonic-crystal lasers
Shinya Ohmagari (National Institute of Advanced Industrial Science and
Control and annihilation of dislocation propagation in diamond by metal-assisted
Noboru Ohtani (Kwansei Gakuin University, Japan)
Development of 4H-SiC single crystal substrates for power device applications
Takeyoshi Onuma (Kogakuin University, Japan)
Deep UV cathodoluminescence properties of rocksalt-structured MgZnO alloys
Mathias Schubert (University of Nebraska-Lincoln, USA)
Phonons, free charge carriers, excitons and band-to-band transitions in β-Ga2
and related alloys determined by ellipsometry and optical Hall effect
Zlatko Sitar (North Carolina State University, USA)
A pathway toward low threshold UVC laser diodes
Tadek Suski (UNIPRESS, Poland)
New features of polar InGaN/GaN quantum wells and emitters induced by manipulation of built-in electric field
Shinya Takashima (Fuji Electric, Japan)
Demonstration of vertical GaN planar MOSFET fabricated by all ion implantation
Tomoyuki Tanikawa (Osaka University, Japan)
Nondestructive defect characterization of widegap semiconductors using multiphoton-excitation photoluminescence
Jianfeng Wang (Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy
of Sciences, Suzhou Nanowin Science and Technology, China)
Bulk GaN substrate growth by HVPE technology for GaN-on-GaN devices
Tim Wernicke (Technical University of Berlin, Germany)
Prospects and challenges for UV LEDs and UV lasers with tunnel junctions
Chih Chung Yang (National Taiwan University, Taiwan)
Enhancement of LED color conversion efficiency through surface plasmon coupling
Shu Yang (Zhejiang University, China)
Dynamic performance and surge current capability of vertical GaN-on-GaN power devices
Hong Zhou (Xidian University, China)
power device potential investigation based on its nano-membrane channels