About workshop
Important dates

General committee
Organizing committee
Steering committee
Local arrangement committee
Program committee
Publication committee
International advisory committee

Advance program
Workshop topics
Program at a glance
Presentation guideline
Plenary & invited speakers

Social activities
Welcome reception





Advance program (at the date of October 1) is here.

Workshop topics

APWS2019 focuses on the science and technology of widegap semiconductors, including III-nitrides, silicon carbide, oxides, diamond and so forth. Research has led to developments in optical and electronic devices, including those for environmental and energy applications. The following topics will be discussed:

Program at a glance

Program at a glance (at the date of August 28)

Presentation guideline

Allotted time for each presentation
Plenary talk: 50 minutes
Invited talk: 30 minutes (including 5-min. Q&A)
Contributed oral talk: 15 minutes (including 3-min. Q&A)
Poster presentation: 110 minutes
  -Nov. 11(Mon) 11:50-13:40
  -Nov. 12(Tue) 12:40-14:30
  -Nov. 14(Thu) 12:30-14:20

Guideline for plenary/invited/contributed oral presenters

A projection laser pointer and a laptop computer with MS PowerPoint 2016 and a latest version of Adobe Acrobat Reader will be available for oral presentations. We kindly ask the speakers to upload the presentation files to the computer during the break time before the session. It is recommended for oral presenters to make slides with the XGA standard (1024×768; 4:3 ratio). The speakers may use their own laptops, compatible with a VGA video connector. In that case, we kindly ask to test the computers during the break time before the session.

Guideline for poster presenters

Boards and push pins will be provided for poster presenters. The boards will fit posters up to A0 format (W841 mm × H1189 mm). Please display the paper title, author names, and affiliations at the top of the posters. The presenters should stand in front of their own posters to discuss their results with attendees during the allotted session time. Posters may be set up from the morning of the day of the poster session and the setting must be completed before the allotted session time (i.e., lunch time). They should be immediately taken down after the session ends. The posters that are left until the start of next session will be discarded by the program committee.

Plenary & invited speakers

Plenary speakers

Hiroshi Amano (Nagoya University, Japan)
Wide-bandgap semiconductors as key materials in realizing zero emission of greenhouse gases

Hideo Hosono (Tokyo Institute of Technology, Japan)
Materials designing novel wide gap semiconductors

Tsutomu Miyasaka (Toin University of Yokohama, Japan)
Progress of halide perovskite semiconductors in high performance photovoltaics

Bo Shen (Peking University, China)
Recent progress on the large lattice-mismatched hetero-epitaxy and physical investigation of III-nitride thin films and quantum structures

Euijoon Yoon (Seoul National University, Korea)
Self-passivated high-efficiency micro-LEDs using sapphire nano-membrane technology

Invited speakers

Michał Boćkowski (UNIPRESS/Nagoya University, Poland)
Bulk growth of GaN. How to overcome the equilibrium crystal shape?

Kevin Chen (Hong Kong University of Science and Technology, China)
Integration on GaN-on-Si p-GaN gate HEMT platform

Yong Hoon Cho (Korea Advanced Institute of Science and Technology, Korea)
Group III-nitride semiconductor nanostructures for room-temperature quantum photonic devices

Hajime Fujikura (SCIOCS, Japan)
HVPE for GaN and AlN epi-layer growth

Bernard Gil (CNRS University Montpellier, France)
Boron nitride from its physics to advanced photonic applications

Shinsuke Harada (National Institute of Advanced Industrial Science and Technology, Japan)
Outstanding potential of SiC superjunction MOSFET as a next generation 1.2 kV-class power transistor

Motoaki Iwaya (Meijo University, Japan)
Toward the realization of AlGaN-based UVB laser diodes

Nam Kyun Kim (Korea Electrotechnology Research Institute, Korea)
Development of SiC power devices with low on-resistance

Yoshinao Kumagai (Tokyo University of Agriculture and Technology, Japan)
Homoepitaxial growth of β-Ga2O3 by halide vapor phase epitaxy for the preparation of epitaxial wafers for vertical power device application

Kei May Lau (Hong Kong University of Science and Technology, China)
GaN-based integrated micro LED research

Jin Min Li (Institute of Semiconductors, Chinese Academy of Science, China)
Emerging new techniques for efficient AlGaN DUV LEDs: from 2D to 3D

Yun-Li Li (PlayNitride, Taiwan)
Development of transparent microLED display

Tsubasa Matsumoto (Kanazawa University, Japan)
Recent progress for inversion channel mobility improvement in diamond MOSFETs

Yutaka Mikawa (Mitsubishi Chemical, Japan)
Acidic ammonothermal growth of bulk GaN

Hideto Miyake (Mie University, Japan)
Threading dislocation reduction of sputter-deposited AlN/sapphire by high-temperature annealing

Okhyun Nam (Korea Polytechnic University, Korea)
Growth and characterization of widegap III-nitride based optoelectronic and electronic devices using HT-MOCVD

Susumu Noda (Kyoto University, Japan)
Recent progress in high-brightness photonic-crystal lasers

Shinya Ohmagari (National Institute of Advanced Industrial Science and Technology, Japan)
Control and annihilation of dislocation propagation in diamond by metal-assisted termination

Noboru Ohtani (Kwansei Gakuin University, Japan)
Development of 4H-SiC single crystal substrates for power device applications

Takeyoshi Onuma (Kogakuin University, Japan)
Deep UV cathodoluminescence properties of rocksalt-structured MgZnO alloys

Mathias Schubert (University of Nebraska-Lincoln, USA)
Phonons, free charge carriers, excitons and band-to-band transitions in β-Ga2O3 and related alloys determined by ellipsometry and optical Hall effect

Zlatko Sitar (North Carolina State University, USA)
A pathway toward low threshold UVC laser diodes

Tadek Suski (UNIPRESS, Poland)
New features of polar InGaN/GaN quantum wells and emitters induced by manipulation of built-in electric field

Shinya Takashima (Fuji Electric, Japan)
Demonstration of vertical GaN planar MOSFET fabricated by all ion implantation process

Tomoyuki Tanikawa (Osaka University, Japan)
Nondestructive defect characterization of widegap semiconductors using multiphoton-excitation photoluminescence

Jianfeng Wang (Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of Sciences, Suzhou Nanowin Science and Technology, China)
Bulk GaN substrate growth by HVPE technology for GaN-on-GaN devices

Tim Wernicke (Technical University of Berlin, Germany)
Prospects and challenges for UV LEDs and UV lasers with tunnel junctions

Chih Chung Yang (National Taiwan University, Taiwan)
Enhancement of LED color conversion efficiency through surface plasmon coupling

Shu Yang (Zhejiang University, China)
Dynamic performance and surge current capability of vertical GaN-on-GaN power devices

Hong Zhou (Xidian University, China)
Ga2O3 power device potential investigation based on its nano-membrane channels