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Workshop topics

APWS2019 focuses on the science and technology of widegap semiconductors, including III-nitrides, silicon carbide, oxides, diamond and so forth. Research has led to developments in optical and electronic devices, including those for environmental and energy applications. The following topics will be discussed:


Program at a glance

Program at a glance (at the date of May 17)





Plenary & invited speakers

Plenary speakers

Hiroshi Amano (Nagoya University)
Wide-bandgap semiconductors as key materials in realizing zero emission of greenhouse gases

Euijoon Yoon (Seoul National University)
Self-passivated high-efficiency micro-LEDs using sapphire nano-membrane technology

Bo Shen (Peking University)
TBA

Hideo Hosono (Tokyo Institute of Technology)
Material designing novel wide gap semiconductors

Tsutomu Miyasaka (Toin University of Yokohama)
Progress of halide perovskite semiconductors in high performance photovoltaics


Invited speakers

Hajime Fujikura (SCIOCS)
HVPE for GaN and AlN epi-layer growth

Yutaka Mikawa (Mitsubishi Chemical)
Acidic Ammonothermal Growth of Bulk GaN

Jianfeng Wang (Suzhou Institute of Nano-tech and Nano-bionics)
Bulk GaN substrate growth by HVPE technology for GaN-on-GaN devices

Michał Boćkowski (UNIPRESS/Nagoya University)
Bulk growth of GaN. How to overcome the equilibrium crystal shape?

Hideto Miyake (Mie University)
Progress on high-temperature-annealed AlN/sapphire for deep ultraviolet LED

Motoaki Iwaya (Meijo University)
Demonstration of high current density operation in UV-B emitters with high Al-content AlGaN cladding layer for realizing deep-UV laser diodes

Susumu Noda and Menaka De Zoysa (Kyoto University)
High-Brightness Photonic-Crystal Lasers and Their Extension to Nitride Semiconductor Systems

Tim Wernicke (Technical University of Berlin)
Growth and characterization of AlGaN based UV-emitters

Jin Min Li (Institute of Semiconductors, Chinese Academy of Science)
The R&D and Industry Progress of Ultraviolet LED

Okhyun Nam (Korea Polytechnic Univeristy)
Growth and characterization of widegap III-nitride based optoelectronic and electronic devices

Yong Hoon Cho (Korea Advanced Institute of Science and Technology)
Group III-nitride semiconductor nanostructures for novel classical and quantum photonic device applications

Kei May Lau (Hong Kong University of Science and Technology)
TBA

Chih Chung Yang (National Taiwan University)
Enhancement of LED color conversion efficiency through surface plasmon coupling

Yun-Li Li (PlayNitride)
TBA

Shinya Takashima (Fuji Electric)
Demonstration of vertical GaN planar MOSFET fabricated by all ion implantation process

Kevin Chen (Hong Kong University of Science and Technology)
GaN integration for power conversion

Yang Shu (Zhejiang University)
Dynamic performance and surge current capability of vertical GaN-on-GaN power devices

Shinsuke Harada (National Institute of Advanced Industrial Science and Technology)
Outstanding potential of SiC superjunction MOSFET as a next generation 1.2 kV-class power transistor

Noboru Ohtani (Kwansei Gakuin University)
Development of 4H-SiC single crystal substrates for power device applications

Nam Kyun Kim (Korea Electrotechnology Research Institute)
Development of SiC power devices with low on-resistance

Yoshinao Kumagai (Tokyo University of Agriculture and Technology)
Investigation of homoepitaxial growth of β-Ga2O3 by halide vapor phase epitaxy for the preparation of epitaxial wafers for vertical power device fabrication

Hong Zhou (Xidian University)
Ga2O3 power device potential investigation based on its nano-membrane channel

Tsubasa Matsumoto (Kanazawa University)
Recent progress of inversion channel diamond MOSFET

Shinya Ohmagari (National Institute of Advanced Industrial Science and Technology)
Large reduction of threading dislocations in diamond by metal-assisted termination (MAT) technique

Tomoyuki Tanikawa (Osaka University)
Nondestructive defect characterization of widegap semiconductors using multiphoton-excitation photoluminescence

Mathias Schubert (University of Nebraska-Lincoln)
Phonons, free charge carriers, excitons and band-to-band transitions in β-Ga2O3 and related alloys determined by ellipsometry and optical Hall effect

Takeyoshi Onuma (Kogakuin University)
Deep UV cathodoluminescence properties of rocksalt-structured MgZnO alloys